Abstract
By carefully controling the nanocrystallite surface passivation, it is possible to make light-emitting porous silicon essentially inert and to stabilize its photo luminescence. Using this material, which we call silicon-rich silicon oxide (SRSO), stable and efficient porous silicon light-emitting devices (LEDs) emitting in the visible have been manufactured. The material's optimization, device design, and device fabrication that have allowed us to achieve these goals are discussed. The electrical and optical properties of the LEDs are described and explained by a model for carrier transport and recombination. By changing the preparation and processing conditions and by doping the SRSO layer with impurities such as erbium, photoluminescence and electroluminescence at longer wavelengths have been demonstrated.
Original language | English (US) |
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Pages (from-to) | 254-260 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 297 |
Issue number | 1-2 |
DOIs | |
State | Published - Apr 1 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Keywords
- Electroluminescence
- Photoluminescence
- Porous silicon
- Surface passivation