TY - GEN
T1 - Strain engineering and luminescence in Si/SiGe three dimensional nanostructures
AU - Modi, Nikhil
AU - Tsybeskov, Leonid
AU - Lockwood, David J.
AU - Wu, Xiao Z.
AU - Baribeau, Jean Marc
N1 - Funding Information:
This work was performed in collaboration with National Research Council of Canada, Hewlett-Packard Research Laboratories, and Tokyo University, and supported by HP Labs Innovation Award and US National Science Foundation.
PY - 2011
Y1 - 2011
N2 - Strain engineering in composition-controlled Si-Si/Ge nanocluster multilayers with high germanium content (∼ 50%) is achieved by varying thicknesses of Si/SiGe layers and studied by low temperature photoluminescence (PL) measurements. The PL spectra show reduction in strained silicon energy bandgap and a splitting presumably associated with partial removal of heavy hole-light hole degeneracy in SiGe valence band. Time-resolved PL measurements performed under different excitation wavelengths show dramatically different PL lifetimes, ranging from ∼ 2 μs to 10 ns and an unusually high PL quantum efficiency. The results are explained by using the Si/SiGe interface recombination model, which is supported by ultra-high resolution transmission and analytical electron microscopy measurements.
AB - Strain engineering in composition-controlled Si-Si/Ge nanocluster multilayers with high germanium content (∼ 50%) is achieved by varying thicknesses of Si/SiGe layers and studied by low temperature photoluminescence (PL) measurements. The PL spectra show reduction in strained silicon energy bandgap and a splitting presumably associated with partial removal of heavy hole-light hole degeneracy in SiGe valence band. Time-resolved PL measurements performed under different excitation wavelengths show dramatically different PL lifetimes, ranging from ∼ 2 μs to 10 ns and an unusually high PL quantum efficiency. The results are explained by using the Si/SiGe interface recombination model, which is supported by ultra-high resolution transmission and analytical electron microscopy measurements.
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U2 - 10.1557/opl.2011.300
DO - 10.1557/opl.2011.300
M3 - Conference contribution
AN - SCOPUS:84860121353
SN - 9781618395122
T3 - Materials Research Society Symposium Proceedings
SP - 64
EP - 69
BT - Group IV Semiconductor Nanostructures and Applications
T2 - 2010 MRS Fall Meeting
Y2 - 29 November 2010 through 3 December 2010
ER -