Strain engineering and luminescence in Si/SiGe three dimensional nanostructures

Nikhil Modi, Leonid Tsybeskov, David J. Lockwood, Xiao Z. Wu, Jean Marc Baribeau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Strain engineering in composition-controlled Si-Si/Ge nanocluster multilayers with high germanium content (∼ 50%) is achieved by varying thicknesses of Si/SiGe layers and studied by low temperature photoluminescence (PL) measurements. The PL spectra show reduction in strained silicon energy bandgap and a splitting presumably associated with partial removal of heavy hole-light hole degeneracy in SiGe valence band. Time-resolved PL measurements performed under different excitation wavelengths show dramatically different PL lifetimes, ranging from ∼ 2 μs to 10 ns and an unusually high PL quantum efficiency. The results are explained by using the Si/SiGe interface recombination model, which is supported by ultra-high resolution transmission and analytical electron microscopy measurements.

Original languageEnglish (US)
Title of host publicationGroup IV Semiconductor Nanostructures and Applications
Pages64-69
Number of pages6
DOIs
StatePublished - 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2010Dec 3 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1305
ISSN (Print)0272-9172

Other

Other2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/1012/3/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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