Strain-induced lateral self-organization in Si/ SiO2 nanostructures

L. Tsybeskov, B. V. Kamenev, A. A. Sirenko, J. P. McCaffrey, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.

Original languageEnglish (US)
Article number013105
JournalApplied Physics Letters
Issue number1
StatePublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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