Strain-induced lateral self-organization in Si/ SiO2 nanostructures

L. Tsybeskov, B. V. Kamenev, A. A. Sirenko, J. P. McCaffrey, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.

Original languageEnglish (US)
Article number013105
JournalApplied Physics Letters
Volume96
Issue number1
DOIs
StatePublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Strain-induced lateral self-organization in Si/ SiO<sub>2</sub> nanostructures'. Together they form a unique fingerprint.

Cite this