Strain-induced lateral self-organization in Si/ SiO2 nanostructures

L. Tsybeskov; B. V. Kamenev; A. A. Sirenko; J. P. McCaffrey; D. J. Lockwood

doi:10.1063/1.3290250

Strain-induced lateral self-organization in Si/ SiO₂ nanostructures

L. Tsybeskov, B. V. Kamenev, A. A. Sirenko, J. P. McCaffrey, D. J. Lockwood

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We show that strain, arising from the mismatch between Si and SiO ₂ thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO₂ interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.

Original language	English (US)
Article number	013105
Journal	Applied Physics Letters
Volume	96
Issue number	1
DOIs	https://doi.org/10.1063/1.3290250
State	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3290250

Cite this

@article{aaff64f3e03449f88dfef35726d83527,

title = "Strain-induced lateral self-organization in Si/ SiO2 nanostructures",

abstract = "We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.",

author = "L. Tsybeskov and Kamenev, {B. V.} and Sirenko, {A. A.} and McCaffrey, {J. P.} and Lockwood, {D. J.}",

note = "Funding Information: This work was supported in part by NSF (Contract No. ECCS 0725443), SRC, and Foundation at NJIT.",

year = "2010",

doi = "10.1063/1.3290250",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Strain-induced lateral self-organization in Si/ SiO2 nanostructures

AU - Tsybeskov, L.

AU - Kamenev, B. V.

AU - Sirenko, A. A.

AU - McCaffrey, J. P.

AU - Lockwood, D. J.

N1 - Funding Information: This work was supported in part by NSF (Contract No. ECCS 0725443), SRC, and Foundation at NJIT.

PY - 2010

Y1 - 2010

N2 - We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.

AB - We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=75749107437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75749107437&partnerID=8YFLogxK

U2 - 10.1063/1.3290250

DO - 10.1063/1.3290250

M3 - Article

AN - SCOPUS:75749107437

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013105

ER -

Strain-induced lateral self-organization in Si/ SiO₂ nanostructures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this