Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

A. A. Sirenko; A. Kazimirov; A. Ougazzaden; S. M. O'Malley; D. H. Bilderback; Z. H. Cai; B. Lai; R. Huang; V. K. Gupta; M. Chien; S. N.G. Chu

doi:10.1063/1.2177634

Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

A. A. Sirenko
, A. Kazimirov
, A. Ougazzaden
, S. M. O'Malley
, D. H. Bilderback
, Z. H. Cai
, B. Lai
, R. Huang
, V. K. Gupta
, M. Chien
, S. N.G. Chu

Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Surface migration of the group-III precursors and strain relaxation at the ridge sidewalls are compared for 2.5 μm wide waveguides based on InGaAsP and InGaAlAs multiple-quantum-well (MQW) structures. The cross-sectional thickness and strain variations have been measured using synchrotron radiation-based x-ray diffraction with an angular resolution of 2 arc s and a beam size of (0.24×0.35) μ m2. Indium-rich overgrowth has been observed for the InGaAsP-based waveguides, while InGaAlAs-based waveguides demonstrate thickness uniformity of the MQW active region with a strain relief of 0.4%μm at the sidewalls.

Original language	English (US)
Article number	081111
Journal	Applied Physics Letters
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.2177634
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2177634

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@article{1760f232803e449db6f0764e9f50196e,

title = "Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides",

abstract = "Surface migration of the group-III precursors and strain relaxation at the ridge sidewalls are compared for 2.5 μm wide waveguides based on InGaAsP and InGaAlAs multiple-quantum-well (MQW) structures. The cross-sectional thickness and strain variations have been measured using synchrotron radiation-based x-ray diffraction with an angular resolution of 2 arc s and a beam size of (0.24×0.35) μ m2. Indium-rich overgrowth has been observed for the InGaAsP-based waveguides, while InGaAlAs-based waveguides demonstrate thickness uniformity of the MQW active region with a strain relief of 0.4\%μm at the sidewalls.",

author = "Sirenko, \{A. A.\} and A. Kazimirov and A. Ougazzaden and O'Malley, \{S. M.\} and Bilderback, \{D. H.\} and Cai, \{Z. H.\} and B. Lai and R. Huang and Gupta, \{V. K.\} and M. Chien and Chu, \{S. N.G.\}",

note = "Funding Information: The authors thank K. Bacher, L. J. P. Ketelsen, and W. Hobson for their support and interest in these studies. Use of the Advances Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-ENG-38. The Cornell High Energy Synchrotron Source was supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under Award DMR-0225180. ",

year = "2006",

doi = "10.1063/1.2177634",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

AU - Sirenko, A. A.

AU - Kazimirov, A.

AU - Ougazzaden, A.

AU - O'Malley, S. M.

AU - Bilderback, D. H.

AU - Cai, Z. H.

AU - Lai, B.

AU - Huang, R.

AU - Gupta, V. K.

AU - Chien, M.

AU - Chu, S. N.G.

N1 - Funding Information: The authors thank K. Bacher, L. J. P. Ketelsen, and W. Hobson for their support and interest in these studies. Use of the Advances Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-ENG-38. The Cornell High Energy Synchrotron Source was supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under Award DMR-0225180.

PY - 2006

Y1 - 2006

N2 - Surface migration of the group-III precursors and strain relaxation at the ridge sidewalls are compared for 2.5 μm wide waveguides based on InGaAsP and InGaAlAs multiple-quantum-well (MQW) structures. The cross-sectional thickness and strain variations have been measured using synchrotron radiation-based x-ray diffraction with an angular resolution of 2 arc s and a beam size of (0.24×0.35) μ m2. Indium-rich overgrowth has been observed for the InGaAsP-based waveguides, while InGaAlAs-based waveguides demonstrate thickness uniformity of the MQW active region with a strain relief of 0.4%μm at the sidewalls.

AB - Surface migration of the group-III precursors and strain relaxation at the ridge sidewalls are compared for 2.5 μm wide waveguides based on InGaAsP and InGaAlAs multiple-quantum-well (MQW) structures. The cross-sectional thickness and strain variations have been measured using synchrotron radiation-based x-ray diffraction with an angular resolution of 2 arc s and a beam size of (0.24×0.35) μ m2. Indium-rich overgrowth has been observed for the InGaAsP-based waveguides, while InGaAlAs-based waveguides demonstrate thickness uniformity of the MQW active region with a strain relief of 0.4%μm at the sidewalls.

UR - https://www.scopus.com/pages/publications/33644518696

UR - https://www.scopus.com/pages/publications/33644518696#tab=citedBy

U2 - 10.1063/1.2177634

DO - 10.1063/1.2177634

M3 - Article

AN - SCOPUS:33644518696

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081111

ER -

Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

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