Strain relaxation due to phosphorus implantation into strained si/sige/si heterostructure

P. K. Swain, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Ion implantation has been established as an important process tool to introduce precise amount of dopants into semiconductors. However, it is known to create several defects in the form of point defects and misfit dislocations. Annealing is generally performed to achieve dopant activation which also minimizes channeling tails and decrease residual extended defect densities. In this paper we have reported the annealing behavior of phosphorus implanted into strained SiGe layer at room temperature. The implantation was performed at 155 KeV with a dose of 1 × 1014/cm2. Post implantation annealing was performed at 600, 700, 800 and 900°C for 10 seconds in a Rapid Thermal Process furnace. I-V, C-V and DLTS measurements hint towards presence of permanent dislocation loops created as a consequence of implantation and annealing.

Original languageEnglish (US)
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages587-590
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
StatePublished - Jan 1 1996
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: Sep 9 1996Sep 11 1996

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other26th European Solid State Device Research Conference, ESSDERC 1996
Country/TerritoryItaly
CityBologna
Period9/9/969/11/96

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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