Strain relaxation in SiGe due to process induced defects and their subsequent annealing behavior

Keyphrases

• SiGe 100%
• Subsequent Annealing 100%
• Reactive Ion Etching 100%
• Strain Relaxation 100%
• Process-induced Defects 100%
• Annealing Behavior 100%
• Ion Implantation 66%
• Room Temperature 33%
• Phosphorus 33%
• Dry Etching 33%
• Dislocation Loops 33%
• C-V Measurement 33%
• Post-implantation Annealing 33%
• SiGe Layer 33%
• Process Furnace 33%
• Strained SiGe 33%
• RTP Annealing 33%
• DLS Measurements 33%
• Defects in Silicon 33%
• Rapid Thermal Process 33%

Material Science

• Reactive Ion Etching 100%
• Annealing 100%
• Silicon 33%
• Ion Implantation 33%
• Dry Etching 33%
• Deep-Level Transient Spectroscopy 33%