A high-resolution scan of the metal-insulator transition in Si: P at millikelvin temperatures has been obtained by applying uniaxial stress. A sharp, but continuous, metal-insulator transition is resolved, with conductivities below Mott's "minimum" value M. These measurements join smoothly with previous low-resolution experiments, ruling out any discontinuity at M. The reproducible critical behavior disagrees with predictions of existing scaling theories of localization.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review Letters|
|State||Published - 1982|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)