Strongly nonlinear luminescence in oxidized porous silicon films

Hideki Koyama, Leonid Tsybeskov, Philippe M. Fauchet

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of ∼ 10 W/cm2. The PL-intensity increase can be expressed by a power law with n ∼ 9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.

Original languageEnglish (US)
Pages (from-to)99-102
Number of pages4
JournalJournal of Luminescence
Volume80
Issue number1-4
DOIs
StatePublished - Dec 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Keywords

  • Free-standing film
  • High excitation effect
  • Oxidation
  • Photoluminescence
  • Porous silicon
  • Superlinear increase

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