Strongly nonlinear luminescence in oxidized porous silicon films

Hideki Koyama; Leonid Tsybeskov; Philippe M. Fauchet

doi:10.1016/S0022-2313(98)00167-7

Strongly nonlinear luminescence in oxidized porous silicon films

Hideki Koyama, Leonid Tsybeskov, Philippe M. Fauchet

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of ∼ 10 W/cm². The PL-intensity increase can be expressed by a power law with n ∼ 9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.

Original language	English (US)
Pages (from-to)	99-102
Number of pages	4
Journal	Journal of Luminescence
Volume	80
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-2313(98)00167-7
State	Published - Dec 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Biophysics
Biochemistry

Keywords

Free-standing film
High excitation effect
Oxidation
Photoluminescence
Porous silicon
Superlinear increase

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10.1016/S0022-2313(98)00167-7

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@article{9450b0ef9581401b858c140948855659,

title = "Strongly nonlinear luminescence in oxidized porous silicon films",

abstract = "Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of ∼ 10 W/cm2. The PL-intensity increase can be expressed by a power law with n ∼ 9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.",

keywords = "Free-standing film, High excitation effect, Oxidation, Photoluminescence, Porous silicon, Superlinear increase",

author = "Hideki Koyama and Leonid Tsybeskov and Fauchet, {Philippe M.}",

note = "Funding Information: This work was supported by the Army Research Office.",

year = "1998",

month = dec,

doi = "10.1016/S0022-2313(98)00167-7",

language = "English (US)",

volume = "80",

pages = "99--102",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Strongly nonlinear luminescence in oxidized porous silicon films

AU - Koyama, Hideki

AU - Tsybeskov, Leonid

AU - Fauchet, Philippe M.

N1 - Funding Information: This work was supported by the Army Research Office.

PY - 1998/12

Y1 - 1998/12

N2 - Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of ∼ 10 W/cm2. The PL-intensity increase can be expressed by a power law with n ∼ 9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.

AB - Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of ∼ 10 W/cm2. The PL-intensity increase can be expressed by a power law with n ∼ 9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.

KW - Free-standing film

KW - High excitation effect

KW - Oxidation

KW - Photoluminescence

KW - Porous silicon

KW - Superlinear increase

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U2 - 10.1016/S0022-2313(98)00167-7

DO - 10.1016/S0022-2313(98)00167-7

M3 - Article

AN - SCOPUS:0347965104

SN - 0022-2313

VL - 80

SP - 99

EP - 102

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-4

ER -

Strongly nonlinear luminescence in oxidized porous silicon films

Abstract

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