Strongly nonlinear luminescence in oxidized porous silicon films

Hideki Koyama, Leonid Tsybeskov, Philippe M. Fauchet

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of ∼ 10 W/cm2. The PL-intensity increase can be expressed by a power law with n ∼ 9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.

Original languageEnglish (US)
Pages (from-to)99-102
Number of pages4
JournalJournal of Luminescence
Issue number1-4
StatePublished - Dec 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Biophysics
  • Biochemistry


  • Free-standing film
  • High excitation effect
  • Oxidation
  • Photoluminescence
  • Porous silicon
  • Superlinear increase


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