Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE

T. Moudakir, G. Orsal, N. Maloufi, A. Sirenko, S. Gautier, M. Bouchaour, S. Ould Saad, P. Salvestrini, A. Ougazzaden

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3 Scopus citations

Abstract

GaN epilayers were grown by metal-organic vapor phase epitaxy (MOVPE) on -and -cut lithium niobate substrates. Ex-situ characterizations of the epilayers by means of scanning electron microscope, atomic force microscope, X-ray diffraction and micro-Raman scattering measurements have revealed same growth features on both substrates. The observation of the morphology shows homogeneous and relatively smooth surface. The shape and density of GaN islands as well as the observed columnar growth mode are not dependent of the orientation of the LN substrates. The X-ray diffraction analysis of 450 nm thick GaN layers grown at 730 °C on - and -cuts showed that both GaN layers reveal the same crystallographic orientation, i.e. -axis orientation normal to the substrate plane and in-plane orientation that coincides with the primary axis of LN substrates. The Raman scattering measurements confirm the growth of an oriented epitaxial GaN layer on LN substrate. Moreover, the deposited layer exhibit a quite good homogeneity, since the Raman spectra recorded for different positions in the layer do not reveal any significant variations in their relative intensities and frequency shifts.

Original languageEnglish (US)
Pages (from-to)295-299
Number of pages5
JournalEPJ Applied Physics
Volume43
Issue number3
DOIs
StatePublished - Sep 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

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