Structural and optical properties of axial silicon-germanium nanowire heterojunctions

X. Wang, L. Tsybeskov, T. I. Kamins, X. Wu, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

Original languageEnglish (US)
Article number234301
JournalJournal of Applied Physics
Volume118
Issue number23
DOIs
StatePublished - Dec 21 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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