Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of threading dislocations. The growth of AlGaN/GaN layers is uniform and shows sharp interfaces between the AlGaN and GaN epilayers. AlGaN nanodots/nanowires, which are formed at the apexes of the nano-pyramids/nano-ridges, are found to be homogeneous in size and to have a higher aluminum mole fraction than the surrounding material. In contrast, the InGaN/GaN growth shows no quantum dots at the apexes of the nanostructures. We found that the growth facets of different Miller's indices are formed on the InGaN/GaN nano-ridges. Energy dispersive X-ray spectroscopy (EDX) shows higher indium incorporation at the intersection of the growth facets. Cathodoluminescence measurements show enhanced luminescence intensity from InGaN multi-quantum wells (MQWs) grown on the nanostructure compared to that from InGaN MQWs grown on an unpatterned area.

Original languageEnglish (US)
Pages (from-to)160-163
Number of pages4
JournalJournal of Crystal Growth
Volume315
Issue number1
DOIs
StatePublished - Jan 15 2011

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Nanostructures
  • A3. Metalorganic vapor phase epitaxy
  • A3. Selective area growth
  • B1. Nitrides
  • B2. Semiconducting IIIV materials

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