Structural and optical properties of Si/Ge nanowire heterojunctions

L. Tsybeskov, H. Y. Chang, S. Mala, T. I. Kamins, X. Wu, D. J. Lockwood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In crystalline, dislocation-free, Si/Ge nanowire (NW) axial heterojunctions grown using the vapor-liquid-solid (VLS) technique, transmission electron microscopy (TEM) photoluminescence (PL) and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain due to the difference in Si and Ge thermal expansion is observed. We find, in agreement with theoretical predictions, that the strain can be partially relived by lateral nanowire expansion in the vicinity of the Si/Ge heteroj unction. In addition to the observed nanowire lateral expansion, the lattice mismatched induced strain could be relaxed by other mechanisms including intermixing, formation of structural defects and partial amorphization. The conclusions are supported by analytical TEM measurements.

Original languageEnglish (US)
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages215-224
Number of pages10
Edition1
DOIs
StatePublished - 2013
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 17 2013

Publication series

NameECS Transactions
Number1
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/17/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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