TY - GEN
T1 - Structural and optical properties of Si/Ge nanowire heterojunctions
AU - Tsybeskov, L.
AU - Chang, H. Y.
AU - Mala, S.
AU - Kamins, T. I.
AU - Wu, X.
AU - Lockwood, D. J.
PY - 2013
Y1 - 2013
N2 - In crystalline, dislocation-free, Si/Ge nanowire (NW) axial heterojunctions grown using the vapor-liquid-solid (VLS) technique, transmission electron microscopy (TEM) photoluminescence (PL) and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain due to the difference in Si and Ge thermal expansion is observed. We find, in agreement with theoretical predictions, that the strain can be partially relived by lateral nanowire expansion in the vicinity of the Si/Ge heteroj unction. In addition to the observed nanowire lateral expansion, the lattice mismatched induced strain could be relaxed by other mechanisms including intermixing, formation of structural defects and partial amorphization. The conclusions are supported by analytical TEM measurements.
AB - In crystalline, dislocation-free, Si/Ge nanowire (NW) axial heterojunctions grown using the vapor-liquid-solid (VLS) technique, transmission electron microscopy (TEM) photoluminescence (PL) and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain due to the difference in Si and Ge thermal expansion is observed. We find, in agreement with theoretical predictions, that the strain can be partially relived by lateral nanowire expansion in the vicinity of the Si/Ge heteroj unction. In addition to the observed nanowire lateral expansion, the lattice mismatched induced strain could be relaxed by other mechanisms including intermixing, formation of structural defects and partial amorphization. The conclusions are supported by analytical TEM measurements.
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U2 - 10.1149/05301.0215ecst
DO - 10.1149/05301.0215ecst
M3 - Conference contribution
AN - SCOPUS:84885576463
SN - 9781607683742
T3 - ECS Transactions
SP - 215
EP - 224
BT - Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
T2 - 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
Y2 - 12 May 2013 through 17 May 2013
ER -