Structural and some other properties of silicon deposited in an SiCl4H2 r.f. discharge

Z. Iqbal, P. Capezzuto, M. Braun, H. R. Oswald, S. Vepřek, G. Bruno, F. Cramarossa, H. Stüssi, J. Brunner, M. Schärli

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17 Scopus citations

Abstract

X-ray and Raman scattering data show that thin films of silicon deposited in an SiCl4H2 discharge at temperatures between about 200 and 430°C are polycrystalline. The correlation between the peak frequency of the Raman line and the crystallite size agrees well with that reported recently for polycrystalline silicon. After annealing under high vacuum, hydrogen evolution is observed above about 450°C, but optical absorption shows no changes even after annealing at approximately 700-800°C. A chlorine content of several per cent was determined by X-ray photoelectron spectroscopy and Rutherford backscattering. The hydrogen concentration was calculated from IR absorption and thermal desorption.

Original languageEnglish (US)
Pages (from-to)43-51
Number of pages9
JournalThin Solid Films
Volume87
Issue number1
DOIs
StatePublished - Jan 8 1982

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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