Structural Characterization of Microcrystalline Silicon Solar Cells Fabricated by Conventional RF-PECVD

Liwei Li, Yuan Min Li, J. A. Anna Selvan, Alan E. Delahoy, Roland A. Levy

Research output: Contribution to journalConference articlepeer-review

Abstract

Direct structural characterization of single junction p-i-n type μc-Si: H solar cells prepared in a single chamber, batch process type KF-PECVD system has been carried out using Raman scattering, XRD, and AFM. The overall degree of microcrystallinity of μc-Si:H i-layers is presented in terms of the ratio of peak intensities (Ic/Ia) of Raman shift at around 520 cm-1 and 480 cm-1, respectively. Strong correlations among device performance, i-layer structural properties, and uniformity have been established using information provided by such direct characterization. Our data support the notion that stable, high quality μc-Si i-layers are grown near the 'edge' of microcrystalline-to-amorphous phase transition. Solar cells made from such optimal areas exhibit moderate microcrystallinity (moderate Ic/Ia values). Preferential orientation corresponding to Si (220) planes was observed on those optimal solar cells, which also exhibit less-regular surface morphologies and lower surface roughness compared to that observed on solar cells with mixed-phase or highly crystalline Si:H i-layers.

Original languageEnglish (US)
Pages (from-to)545-550
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume762
DOIs
StatePublished - Jan 1 2003
EventMaterials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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