Abstract
The morphology of nanocrystalline (nc)-Si/amorphous (a)-Si02 superlattices (SLs) is studied using Raman spectroscopy in the acoustic and optical phonon ranges, transmission electron microscopy (TEM), and atomic force microscopy (AFM). It is demonstrated that high temperature annealing (up to 1100°C) and oxidation in CVFO ambient do not destroy the SL structure, which retains its original periodicity and nc-Si/a-SiU2 interface abruptness. It is found that oxidation at high temperatures reduces the defect density in nc-Si/a-SiC>2 SLs and induces the lateral coalescence of Si nanocrystals (NCs). The size, shape, packing density, and crystallographic orientation of the Si nanocrystals are studied as a function of the oxidation time.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 141-146 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 536 |
| State | Published - 1999 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering