Structural modifications of nc-Si/SiO2 super-lattices by localized photo-induced heating

B. V. Kamenev, H. Grebel, L. Tsybeskov, V. Yu Timoshenko

Research output: Contribution to journalConference articlepeer-review


Structural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO:) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5-8 kW/cm2 for cw excitation by 514 nm line of Ar+ laser and ∼11-15 mJ/cm 2 for pulsed irradiation by 248 nm, τ∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%.

Original languageEnglish (US)
Article numberF7.26
Pages (from-to)219-224
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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