STRUCTURE OF SELECTIVE LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN.

M. L. Green, Roland Levy

Research output: Contribution to journalArticlepeer-review

76 Scopus citations

Abstract

Tungsten films have been selectively deposited by LPCVD via the reduction of WF//6 by either Si or H//2. Films formed by H//2 reduction can be unlimited in thickness; however, those formed by Si reduction are self-limited in thickness to about 150 angstroms. The effects of deposition parameters such as temperature and WF//6 and H//2 flow rates on the properties of the W films have been investigated. The W films exhibit good contact resistance to N** plus and P** plus Si, and are also found to be excellent diffusion barriers between Al and Si at annealing temperatures up to 450 degree C.

Original languageEnglish (US)
Pages (from-to)1243-1250
Number of pages8
JournalJournal of the Electrochemical Society
Volume132
Issue number5
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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