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STRUCTURE OF SELECTIVE LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN.
M. L. Green,
R. A. Levy
Research output
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Article
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peer-review
83
Scopus citations
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Dive into the research topics of 'STRUCTURE OF SELECTIVE LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN.'. Together they form a unique fingerprint.
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Keyphrases
Low Pressure
100%
Tungsten
100%
W Film
100%
Vapor-deposited Film
100%
Angstrom
50%
Low Pressure Chemical Vapor Deposition (LPCVD)
50%
Tungsten Film
50%
Deposition Parameters
50%
Contact Resistance
50%
H2O2 Reduction
50%
Diffusion Barrier
50%
Self-limiting
50%
Annealing Temperature
50%
Engineering
Flow Rate
100%
Deposited Film
100%
Annealing Temperature
100%
Deposition Parameter
100%
Diffusion Barrier
100%
Material Science
Film
100%
Tungsten
100%
Low Pressure Chemical Vapor Deposition
20%
Contact Resistance
20%
Chemical Engineering
Low Pressure Chemical Vapor Deposition
100%
Diffusion Barrier
100%