Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy

Ravi Teja Velpula, Barsha Jain, Hieu P.T. Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the demonstration of electron blocking layer free AlInN nanowire light-emitting diodes (LEDs) operating in the 280-365 nm wavelength region. The molecular beam epitaxial grown AlInN nanowires have a relatively high internal quantum efficiency of > 52%. Moreover, we show that the light extraction efficiency of the nanowires could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays. This study provides significant insights into the design and fabrication of a new type of high-performance AlInN nanowire ultraviolet light-emitters.

Original languageEnglish (US)
Title of host publication2022 Compound Semiconductor Week, CSW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665453400
DOIs
StatePublished - 2022
Event2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States
Duration: Jun 1 2022Jun 3 2022

Publication series

Name2022 Compound Semiconductor Week, CSW 2022

Conference

Conference2022 Compound Semiconductor Week, CSW 2022
Country/TerritoryUnited States
CityAnn Arbor
Period6/1/226/3/22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Keywords

  • AlInN
  • light-emitting diodes
  • nanowire

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