Study on the quantum efficiency enhancement in InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy

H. P.T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the achievement of a record high internal quantum efficiency in InGaN/GaN dot-in-a-wire light emitting diodes by significantly reducing the electron overflow and enhancing the hole transport in the device active regions.

Original languageEnglish (US)
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages65-66
Number of pages2
DOIs
StatePublished - Dec 1 2011
Externally publishedYes
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: Oct 9 2011Oct 13 2011

Publication series

NameIEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period10/9/1110/13/11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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