@inproceedings{e5a843954d9e456fa6ccc08dc7ce31c6,
title = "Study on the quantum efficiency enhancement in InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy",
abstract = "We report on the achievement of a record high internal quantum efficiency in InGaN/GaN dot-in-a-wire light emitting diodes by significantly reducing the electron overflow and enhancing the hole transport in the device active regions.",
author = "Nguyen, {H. P.T.} and K. Cui and S. Zhang and S. Fathololoumi and Z. Mi",
year = "2011",
doi = "10.1109/PHO.2011.6110427",
language = "English (US)",
isbn = "9781424489404",
series = "IEEE Photonic Society 24th Annual Meeting, PHO 2011",
pages = "65--66",
booktitle = "IEEE Photonic Society 24th Annual Meeting, PHO 2011",
note = "24th Annual Meeting on IEEE Photonic Society, PHO 2011 ; Conference date: 09-10-2011 Through 13-10-2011",
}