Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

P. L. Bonanno, S. Gautier, A. A. Sirenko, A. Kazimirov, Z. H. Cai, W. H. Goh, J. Martin, A. Martinez, T. Moudakir, N. Maloufi, M. B. Assouar, A. Ramdane, L. Le Gratiet, A. Ougazzaden

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Highly relaxed GaN nanodots and submicron ridges have been selectively grown in the NSAG regime using MOVPE on lattice mismatched 6H-SiC and AlN substrates. 2D real space and 3D reciprocal space mapping was performed with a CCD detector using 10.4 keV synchrotron X-ray radiation at the 2-ID-D micro-diffraction beamline at Advanced Photon Source (APS). Calibration procedures have been developed to overcome the unique challenges of analyzing NSAG structures grown on highly mismatched substrates. We studied crystallographic planar bending on the submicron scale and found its correlation with strain relaxation in the NSAG ridges.

Original languageEnglish (US)
Pages (from-to)320-324
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume268
Issue number3-4
DOIs
StatePublished - Feb 2010

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Keywords

  • GaN
  • Mismatched
  • Nano
  • RSM
  • Synchrotron
  • X-ray diffraction

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