SUBMILLIMETER WAVE STUDY OF THE METAL-INSULATOR TRANSITION IN PHOSPHOROUS-DOPED SILICON.

M. Capizzi; G. A. Thomas; G. Devlin; F. DeRosa; J. Mock; S. J. Allen

SUBMILLIMETER WAVE STUDY OF THE METAL-INSULATOR TRANSITION IN PHOSPHOROUS-DOPED SILICON.

M. Capizzi, G. A. Thomas, G. Devlin, F. DeRosa, J. Mock, S. J. Allen

Research output: Contribution to conference › Paper › peer-review

Abstract

The minimum energy E//p needed to absorb far-infrared radiation in an ensemble of P impurities in Si at T approximately equals 2 K is observed. As the P density n//D is increased, band formation by overlapping 2P//o states of effective radius r//D equals (50 plus or minus 10) A describes E//p, with a zero-crossing at n//D//c equals (2. 9 plus or minus 0. 5) multiplied by 10**1**8 cm** minus **3, near the Mott density.

Original language	English (US)
Pages	957-960
Number of pages	4
State	Published - 1979
Externally published	Yes
Event	Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978

Other

Other	Pap from the Int Conf on the Phys of Semicond, 14th
City	Edinburgh, Scotl
Period	9/4/78 → 9/8/78

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{ef3f0ebc0180405dae005745cd739571,

title = "SUBMILLIMETER WAVE STUDY OF THE METAL-INSULATOR TRANSITION IN PHOSPHOROUS-DOPED SILICON.",

abstract = "The minimum energy E//p needed to absorb far-infrared radiation in an ensemble of P impurities in Si at T approximately equals 2 K is observed. As the P density n//D is increased, band formation by overlapping 2P//o states of effective radius r//D equals (50 plus or minus 10) A describes E//p, with a zero-crossing at n//D//c equals (2. 9 plus or minus 0. 5) multiplied by 10**1**8 cm** minus **3, near the Mott density.",

author = "M. Capizzi and Thomas, {G. A.} and G. Devlin and F. DeRosa and J. Mock and Allen, {S. J.}",

year = "1979",

language = "English (US)",

pages = "957--960",

note = "Pap from the Int Conf on the Phys of Semicond, 14th ; Conference date: 04-09-1978 Through 08-09-1978",

}

TY - CONF

T1 - SUBMILLIMETER WAVE STUDY OF THE METAL-INSULATOR TRANSITION IN PHOSPHOROUS-DOPED SILICON.

AU - Capizzi, M.

AU - Thomas, G. A.

AU - Devlin, G.

AU - DeRosa, F.

AU - Mock, J.

AU - Allen, S. J.

PY - 1979

Y1 - 1979

N2 - The minimum energy E//p needed to absorb far-infrared radiation in an ensemble of P impurities in Si at T approximately equals 2 K is observed. As the P density n//D is increased, band formation by overlapping 2P//o states of effective radius r//D equals (50 plus or minus 10) A describes E//p, with a zero-crossing at n//D//c equals (2. 9 plus or minus 0. 5) multiplied by 10**1**8 cm** minus **3, near the Mott density.

AB - The minimum energy E//p needed to absorb far-infrared radiation in an ensemble of P impurities in Si at T approximately equals 2 K is observed. As the P density n//D is increased, band formation by overlapping 2P//o states of effective radius r//D equals (50 plus or minus 10) A describes E//p, with a zero-crossing at n//D//c equals (2. 9 plus or minus 0. 5) multiplied by 10**1**8 cm** minus **3, near the Mott density.

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UR - http://www.scopus.com/inward/citedby.url?scp=0018315270&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0018315270

SP - 957

EP - 960

T2 - Pap from the Int Conf on the Phys of Semicond, 14th

Y2 - 4 September 1978 through 8 September 1978

ER -

SUBMILLIMETER WAVE STUDY OF THE METAL-INSULATOR TRANSITION IN PHOSPHOROUS-DOPED SILICON.

Abstract

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All Science Journal Classification (ASJC) codes

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