SUBMILLIMETER WAVE STUDY OF THE METAL-INSULATOR TRANSITION IN PHOSPHOROUS-DOPED SILICON.

M. Capizzi, G. A. Thomas, G. Devlin, F. DeRosa, J. Mock, S. J. Allen

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The minimum energy E//p needed to absorb far-infrared radiation in an ensemble of P impurities in Si at T approximately equals 2 K is observed. As the P density n//D is increased, band formation by overlapping 2P//o states of effective radius r//D equals (50 plus or minus 10) A describes E//p, with a zero-crossing at n//D//c equals (2. 9 plus or minus 0. 5) multiplied by 10**1**8 cm** minus **3, near the Mott density.

Original languageEnglish (US)
Pages957-960
Number of pages4
StatePublished - Jan 1 1979
Externally publishedYes
EventPap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl
Duration: Sep 4 1978Sep 8 1978

Other

OtherPap from the Int Conf on the Phys of Semicond, 14th
CityEdinburgh, Scotl
Period9/4/789/8/78

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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