Suppressed boron diffusion in bulk silicon below strained (100) Si _1-xGe _x surfaces during nitrogen annealing

Keyphrases

• Activation Energy 40%
• All-silicon 20%
• Annealing 20%
• Annealing Conditions 20%
• Boron 60%
• Boron Diffusion 100%
• Bulk Silicon 100%
• Capping Layer 20%
• Defect Recombination 20%
• Diffusivity 60%
• Dominant Points 20%
• Dopant Diffusion 20%
• Epitaxially Grown 40%
• Equilibrium Point 20%
• Germanium 20%
• Marker Layer 20%
• Nitrogen Annealing 100%
• Nonlocal Effect 20%
• Point Defect Concentration 20%
• Quantitative Effects 20%
• Rapid Thermal Chemical Vapor Deposition 20%
• SiGe 40%
• Silicon Bulk 20%
• Silicon Sample 20%
• Silicon Surface 20%
• Strained Si 20%
• Strained SiGe 20%
• Surface Layer 20%
• Surface Zone 20%
• Undoped 20%

Engineering

• Activation Energy 66%
• Bulk Silicon 100%
• Capping Layer 33%
• Chemical Vapor Deposition 33%
• Defects 66%
• Diffusivity 100%
• Dopants 33%
• Equilibrium Point 33%
• Silicon Surface 33%
• Site Generation 33%
• Surface Layer 33%
• Surface Region 33%
• Vapor Deposition 33%