TY - JOUR
T1 - Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting
AU - Shet, Sudhakar
AU - Ahn, Kwang Soon
AU - Deutsch, Todd
AU - Wang, He Ii
AU - Ravindra, Nuggehalli
AU - Yan, Yanfa
AU - Turner, John
AU - Al-Jassim, Mowafak
N1 - Funding Information:
This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308.
PY - 2010/1
Y1 - 2010/1
N2 - ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.
AB - ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.
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U2 - 10.1557/jmr.2010.0017
DO - 10.1557/jmr.2010.0017
M3 - Article
AN - SCOPUS:77953128716
SN - 0884-2914
VL - 25
SP - 69
EP - 75
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 1
ER -