@inproceedings{c6411fbbd23b4f8d8ae6661880ee71cc,
title = "Synthesis and characterization of bandgap-reduced p-type cu-incorporated ZnO films",
abstract = "Cu-doped ZnO thin films with significantly reduced bandgaps were synthesized by incorporation of Cu at room temperature and followed by post-deposition annealing at 500°C in air for 2 hours. All the films were synthesized by RF magnetron sputtering in O2 gas ambient on F-doped tin oxide-coated glass. We found that annealing at 600°C, unlike at 500°C, caused the formation of the CuO phase in the ZnO:Cu films. Optical absorption indicated that some of the Cu in as- grown ZnO:Cu films is metallic. It can be converted into Cu+1 acceptor states by post-deposition annealing at 500°C in air. Mott-Schottky plots, open-circuit response to illumination, and illuminated current-voltage curves along with optical-absorption measurements revealed that ZnO:Cu thin films with p-type conductivity and significantly reduced bandgap were successfully synthesized by Cu incorporation.",
keywords = "Bandgap reduction, Cu incorporation, F-doped tin oxide, P-type ZnO, Post-deposition annealing, Sputtering",
author = "Ahn, {Kwang Soon} and Sudhakar Shet and Todd Deutsch and Yanfa Yan and John Turner and Ravindra, {N. M.} and M. Al-Jassim",
year = "2008",
language = "English (US)",
isbn = "9781605606217",
series = "Materials Science and Technology Conference and Exhibition, MS and T'08",
pages = "901--913",
booktitle = "Materials Science and Technology Conference and Exhibition MS and T'08",
note = "Materials Science and Technology Conference and Exhibition, MS and T'08 ; Conference date: 05-10-2008 Through 09-10-2008",
}