Synthesis and characterization of bandgap-reduced p-type cu-incorporated ZnO films

Kwang Soon Ahn, Sudhakar Shet, Todd Deutsch, Yanfa Yan, John Turner, N. M. Ravindra, M. Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

Cu-doped ZnO thin films with significantly reduced bandgaps were synthesized by incorporation of Cu at room temperature and followed by post-deposition annealing at 500°C in air for 2 hours. All the films were synthesized by RF magnetron sputtering in O2 gas ambient on F-doped tin oxide-coated glass. We found that annealing at 600°C, unlike at 500°C, caused the formation of the CuO phase in the ZnO:Cu films. Optical absorption indicated that some of the Cu in as- grown ZnO:Cu films is metallic. It can be converted into Cu+1 acceptor states by post-deposition annealing at 500°C in air. Mott-Schottky plots, open-circuit response to illumination, and illuminated current-voltage curves along with optical-absorption measurements revealed that ZnO:Cu thin films with p-type conductivity and significantly reduced bandgap were successfully synthesized by Cu incorporation.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition MS and T'08
Pages901-913
Number of pages13
StatePublished - 2008
EventMaterials Science and Technology Conference and Exhibition, MS and T'08 - Pittsburgh, PA, United States
Duration: Oct 5 2008Oct 9 2008

Publication series

NameMaterials Science and Technology Conference and Exhibition, MS and T'08
Volume2

Other

OtherMaterials Science and Technology Conference and Exhibition, MS and T'08
Country/TerritoryUnited States
CityPittsburgh, PA
Period10/5/0810/9/08

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials

Keywords

  • Bandgap reduction
  • Cu incorporation
  • F-doped tin oxide
  • P-type ZnO
  • Post-deposition annealing
  • Sputtering

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