Synthesis and characterization of Ge2Sb2Te 5 nanowires with memory switching effect

Yeonwoong Jung, Se Ho Lee, Dong Kyun Ko, Ritesh Agarwal

Research output: Contribution to journalArticlepeer-review

102 Scopus citations


Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials

Original languageEnglish (US)
Pages (from-to)14026-14027
Number of pages2
JournalJournal of the American Chemical Society
Issue number43
StatePublished - Nov 1 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry


Dive into the research topics of 'Synthesis and characterization of Ge<sub>2</sub>Sb<sub>2</sub>Te <sub>5</sub> nanowires with memory switching effect'. Together they form a unique fingerprint.

Cite this