Synthesis and characterization of Ge2Sb2Te 5 nanowires with memory switching effect

Yeonwoong Jung; Se Ho Lee; Dong Kyun Ko; Ritesh Agarwal

doi:10.1021/ja065938s

Synthesis and characterization of Ge₂Sb₂Te ₅ nanowires with memory switching effect

Yeonwoong Jung
, Se Ho Lee
, Dong Kyun Ko
, Ritesh Agarwal

Research output: Contribution to journal › Article › peer-review

114 Scopus citations

Abstract

Ge₂Sb₂Te₅ nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge₂Sb₂Te₅ NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials

Original language	English (US)
Pages (from-to)	14026-14027
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	43
DOIs	https://doi.org/10.1021/ja065938s
State	Published - Nov 1 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
General Chemistry
Biochemistry
Colloid and Surface Chemistry

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10.1021/ja065938s

Cite this

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title = "Synthesis and characterization of Ge2Sb2Te 5 nanowires with memory switching effect",

abstract = "Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials",

author = "Yeonwoong Jung and Lee, \{Se Ho\} and Ko, \{Dong Kyun\} and Ritesh Agarwal",

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language = "English (US)",

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AU - Jung, Yeonwoong

AU - Lee, Se Ho

AU - Ko, Dong Kyun

AU - Agarwal, Ritesh

PY - 2006/11/1

Y1 - 2006/11/1

N2 - Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials

AB - Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials

UR - https://www.scopus.com/pages/publications/33750443920

UR - https://www.scopus.com/pages/publications/33750443920#tab=citedBy

U2 - 10.1021/ja065938s

DO - 10.1021/ja065938s

M3 - Article

C2 - 17061875

AN - SCOPUS:33750443920

SN - 0002-7863

VL - 128

SP - 14026

EP - 14027

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 43

ER -

Synthesis and characterization of Ge₂Sb₂Te ₅ nanowires with memory switching effect

Abstract

All Science Journal Classification (ASJC) codes

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