Synthesis and characterization of nitrogen doped ZnO (ZnO:N) films for solar driven hydrogen production by photoelectrochemical water splitting

Sudhakar Shet, Yanfa Yan, Todd Deutsch, N. Ravindra, John Turner, Mowafak Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
Pages259-267
Number of pages9
StatePublished - Dec 1 2010
EventMaterials Science and Technology Conference and Exhibition 2010, MS and T'10 - Houston, TX, United States
Duration: Oct 17 2010Oct 21 2010

Publication series

NameMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
Volume1

Other

OtherMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
CountryUnited States
CityHouston, TX
Period10/17/1010/21/10

All Science Journal Classification (ASJC) codes

  • Materials Science (miscellaneous)

Keywords

  • Band gap
  • Crystallinity
  • Doping
  • Gas ambient
  • N concentration
  • Photoelectrochemical
  • RF power
  • Sputter
  • Substrate temperature
  • ZnO

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