@inproceedings{429e464bd1e4488aab0caad452a88ea5,
title = "Synthesis and characterization of nitrogen doped ZnO (ZnO:N) films for solar driven hydrogen production by photoelectrochemical water splitting",
abstract = "ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.",
keywords = "Band gap, Crystallinity, Doping, Gas ambient, N concentration, Photoelectrochemical, RF power, Sputter, Substrate temperature, ZnO",
author = "Sudhakar Shet and Yanfa Yan and Todd Deutsch and Ravindra Nuggehalli and John Turner and Mowafak Al-Jassim",
year = "2010",
language = "English (US)",
isbn = "9781617820328",
series = "Materials Science and Technology Conference and Exhibition 2010, MS and T'10",
pages = "259--267",
booktitle = "Materials Science and Technology Conference and Exhibition 2010, MS and T'10",
note = "Materials Science and Technology Conference and Exhibition 2010, MS and T'10 ; Conference date: 17-10-2010 Through 21-10-2010",
}