Synthesis and characterization of plasma assisted chemically vapor deposited tantalum

Y. Suh, W. Chen, S. Maeng, S. Gu, R. A. Levy, H. Thridandam

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4 Scopus citations

Abstract

This study focuses on the synthesis of tantalum (Ta) coatings on high strength steel by plasma assisted chemical vapor deposition using tantalum pentachloride (TaCl5) as a preferred precursor and hydrogen (H 2) as a reducing agent. The interrelationships governing the growth kinetics, compositions, and coating properties are discussed as a function of deposition temperature, total pressure, and gas composition. The synthesized tantalum coatings are shown to be essentially pure with trace amounts of oxygen, carbon, and chlorine. The coatings are found to be dense and to exhibit conformal coverage. Preferential formation of the α-Ta phase is noted to occur when coatings are grown sequentially and in-situ on a TaNx seed layer.

Original languageEnglish (US)
Pages (from-to)5452-5456
Number of pages5
JournalThin Solid Films
Volume518
Issue number19
DOIs
StatePublished - Jul 30 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Keywords

  • Auger Electron Spectroscopy
  • Plasma Assisted Chemical Vapor Deposition
  • Scanning Electron Microscopy
  • Tantalum
  • X-ray diffraction

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