Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon

Onofrio L. Russo, Katherine A. Dumas, Michael H. Herman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The critical point energies, Eo, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, E1 are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages213-218
Number of pages6
ISBN (Print)1558991743
StatePublished - Jan 1 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume279
ISSN (Print)0272-9172

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period11/30/9212/4/92

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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