Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon

Onofrio L. Russo; Katherine A. Dumas; Michael H. Herman

Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon

Onofrio L. Russo, Katherine A. Dumas, Michael H. Herman

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The critical point energies, E_o, E₁ and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 10¹⁴ and 10¹⁶ e^-/cm² were compared to the samples before irradiation. The value of the low energy weaker structure, E_o and the higher energy main structure, E₁ are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for E_o as found by EBER were consistent with those of EER but those of E₁ were not.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	213-218
Number of pages	6
ISBN (Print)	1558991743
State	Published - 1993
Event	Beam Solid Interactions: Fundamentals and Applications - Boston, MA, USA Duration: Nov 30 1992 → Dec 4 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	279
ISSN (Print)	0272-9172

Other

Other	Beam Solid Interactions: Fundamentals and Applications
City	Boston, MA, USA
Period	11/30/92 → 12/4/92

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{023aa74de4fb4da3a7018f4b08fb7305,

title = "Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon",

abstract = "The critical point energies, Eo, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, E1 are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.",

author = "Russo, {Onofrio L.} and Dumas, {Katherine A.} and Herman, {Michael H.}",

year = "1993",

language = "English (US)",

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series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "213--218",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Beam Solid Interactions: Fundamentals and Applications ; Conference date: 30-11-1992 Through 04-12-1992",

}

Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon. / Russo, Onofrio L.; Dumas, Katherine A.; Herman, Michael H.
Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 213-218 (Materials Research Society Symposium Proceedings; Vol. 279).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon

AU - Russo, Onofrio L.

AU - Dumas, Katherine A.

AU - Herman, Michael H.

PY - 1993

Y1 - 1993

N2 - The critical point energies, Eo, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, E1 are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

AB - The critical point energies, Eo, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, E1 are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

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M3 - Conference contribution

AN - SCOPUS:0027151644

SN - 1558991743

T3 - Materials Research Society Symposium Proceedings

SP - 213

EP - 218

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Beam Solid Interactions: Fundamentals and Applications

Y2 - 30 November 1992 through 4 December 1992

ER -

Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon

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