Tantalum thin films deposited by ion assisted magnetron sputtering

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

This work investigated the effect of ion bombardment on tantalum thin films deposited by radio frequency magnetron sputtering at ambient temperature on (100) oriented silicon and polycrystalline aluminum. Negative bias voltage, 0 to - 300 V, was applied to the substrate to control the energy of the ions bombarding the growing film. The films were characterized by X-ray diffraction, Rutherford backscattering, scanning electron microscopy, and atomic force microscopy. The desired pure body centered cubic phase Ta films were deposited with - 150 V substrate bias and with comparable atom and ion fluxes, conditions significantly different than reported earlier, and achievable in a relatively simple system that is easy to scale to industrial operation.

Original languageEnglish (US)
Pages (from-to)1898-1905
Number of pages8
JournalThin Solid Films
Volume516
Issue number8
DOIs
StatePublished - Feb 29 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Keywords

  • Ion bombardment
  • Sputtering
  • Tantalum

Fingerprint Dive into the research topics of 'Tantalum thin films deposited by ion assisted magnetron sputtering'. Together they form a unique fingerprint.

Cite this