Tantalum thin films deposited by ion assisted magnetron sputtering

Engineering & Materials Science

• Tantalum 100%
• Magnetron sputtering 96%
• Thin films 68%
• Rutherford backscattering spectroscopy 67%
• Ions 66%
• Ion bombardment 57%
• Film growth 57%
• Substrates 51%
• Atomic force microscopy 46%
• Bias voltage 45%
• Atoms 37%
• X ray diffraction 35%
• Fluxes 29%
• Scanning electron microscopy 28%
• Silicon 28%
• Aluminum 27%
• Temperature 14%

Physics & Astronomy

• tantalum 78%
• magnetron sputtering 60%
• thin films 37%
• ions 33%
• ambient temperature 23%
• bombardment 22%
• backscattering 21%
• radio frequencies 20%
• atomic force microscopy 18%
• aluminum 16%
• scanning electron microscopy 15%
• electric potential 13%
• silicon 12%
• diffraction 12%
• atoms 12%
• x rays 10%
• energy 7%

Chemical Compounds

• Magnetron Sputtering 83%
• Liquid Film 35%
• Ion Bombardment 31%
• Rutherford Backscattering Spectroscopy 30%
• Body-Centered Cubic Crystal System 29%
• Ion 28%
• Polycrystalline Solid 21%
• Cubic Space Group 19%
• Atomic Force Microscopy 19%
• Voltage 17%
• Scanning Electron Microscopy 14%
• Purity 12%
• X-Ray Diffraction 11%
• Energy 11%