Techniques to inspect SCALPEL masks

Darren Taylor, William Howard, Rich Kasica, Reginald Farrow, Anthony Novembre, Carlos Caminos, Chester Knurek

Research output: Contribution to journalConference articlepeer-review

Abstract

As semiconductor lithography nodes become increasingly difficult to achieve with traditional optical lithography, several new technologies have emerged. SCALPEL (SCattering with Angular Limitation Electron beam Lithography) is at the forefront of the NGL technologies. SCALPEL technology uses an electron beam rather than laser light to produce images on the wafer. The SCALPEL mask is non-traditional in the sense that it is silicon-based instead of glass-based and the patterns are written on a membrane. SCALPEL provides unique challenges for the mask maker as well as the semiconductor manufacturer. In this study, we have demonstrated that the KLA-Tencor 3XX platform is capable of inspecting prototype SCALPEL reticles for pattern defects. The inspections were performed with two light wavelengths: 488 nm and 365 nm. Included are the difficulties faced and a projected roadmap for the inspection tool when SCALPEL enters at the 100 nm technology node.

Original languageEnglish (US)
Pages (from-to)858-864
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3873 (I
DOIs
StatePublished - Jan 1 1999
Event19th Annual BACUS Symposium on Photomask Technology - Monterey, CA, USA
Duration: Sep 15 1999Sep 17 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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