An analysis is made of the temperature and voltage dependence of the barrier height in SnO2/Si solar cells essentially based on the experimental results of Feng et al. It is shown that the temperature dependence of the barrier height does not obey the expected behaviour. The calculations seem to indicate that this is probably caused by the temperature dependence of the work function of SnO2, and the electron affinity of Si.
|Original language||English (US)|
|Number of pages||8|
|Journal||physica status solidi (a)|
|State||Published - Jan 1 1982|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics