Temperature and voltage dependence of the barrier height in SnO2/Si solar cells

N. Ravindra, K. Sunil Kumar, V. K. Srivastava

Research output: Contribution to journalArticlepeer-review

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Abstract

An analysis is made of the temperature and voltage dependence of the barrier height in SnO2/Si solar cells essentially based on the experimental results of Feng et al. It is shown that the temperature dependence of the barrier height does not obey the expected behaviour. The calculations seem to indicate that this is probably caused by the temperature dependence of the work function of SnO2, and the electron affinity of Si.

Original languageEnglish (US)
Pages (from-to)623-630
Number of pages8
Journalphysica status solidi (a)
Volume70
Issue number2
DOIs
StatePublished - Jan 1 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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