Temperature dependent emissivity measurements of Si, SiO2/Si, and HgCdTe

N. M. Ravindra; F. M. Tong; W. F. Kosonocky; J. R. Markham; S. Liu; K. Kinsella

doi:10.1557/proc-342-431

Temperature dependent emissivity measurements of Si, SiO₂/Si, and HgCdTe

N. M. Ravindra, F. M. Tong, W. F. Kosonocky, J. R. Markham, S. Liu, K. Kinsella

Physics

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The results of emissivity of (a) Si and SiO₂/Si in the temperature range of 320 to 1240 K and (b). HgCdTe at temperatures of 303 and 440 K, using Fourier Transform Infrared(FTIR) spectroscopy, in the wavelength range of 1.5 to 20 μm, have been reported here. The measurements on SiO₂/Si have been performed for oxide thickness ranging from 60 to 500 nm. These results coupled with calculations of emissivity from first principles lead us to model the wavelength dependence of emissivity. Emissivity estimates have been obtained for HgCdTe using its fundamental optical constants.

Original language	English (US)
Pages (from-to)	431-436
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	342
DOIs	https://doi.org/10.1557/proc-342-431
State	Published - 1994
Event	Proceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 7 1994

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{6ee31aaf93cb42a3a7b0a3adca8d4182,

title = "Temperature dependent emissivity measurements of Si, SiO2/Si, and HgCdTe",

abstract = "The results of emissivity of (a) Si and SiO2/Si in the temperature range of 320 to 1240 K and (b). HgCdTe at temperatures of 303 and 440 K, using Fourier Transform Infrared(FTIR) spectroscopy, in the wavelength range of 1.5 to 20 μm, have been reported here. The measurements on SiO2/Si have been performed for oxide thickness ranging from 60 to 500 nm. These results coupled with calculations of emissivity from first principles lead us to model the wavelength dependence of emissivity. Emissivity estimates have been obtained for HgCdTe using its fundamental optical constants.",

author = "Ravindra, \{N. M.\} and Tong, \{F. M.\} and Kosonocky, \{W. F.\} and Markham, \{J. R.\} and S. Liu and K. Kinsella",

year = "1994",

doi = "10.1557/proc-342-431",

language = "English (US)",

volume = "342",

pages = "431--436",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 Spring Meeting of the Materials Research Society ; Conference date: 04-04-1994 Through 07-04-1994",

}

TY - JOUR

T1 - Temperature dependent emissivity measurements of Si, SiO2/Si, and HgCdTe

AU - Ravindra, N. M.

AU - Tong, F. M.

AU - Kosonocky, W. F.

AU - Markham, J. R.

AU - Liu, S.

AU - Kinsella, K.

PY - 1994

Y1 - 1994

N2 - The results of emissivity of (a) Si and SiO2/Si in the temperature range of 320 to 1240 K and (b). HgCdTe at temperatures of 303 and 440 K, using Fourier Transform Infrared(FTIR) spectroscopy, in the wavelength range of 1.5 to 20 μm, have been reported here. The measurements on SiO2/Si have been performed for oxide thickness ranging from 60 to 500 nm. These results coupled with calculations of emissivity from first principles lead us to model the wavelength dependence of emissivity. Emissivity estimates have been obtained for HgCdTe using its fundamental optical constants.

AB - The results of emissivity of (a) Si and SiO2/Si in the temperature range of 320 to 1240 K and (b). HgCdTe at temperatures of 303 and 440 K, using Fourier Transform Infrared(FTIR) spectroscopy, in the wavelength range of 1.5 to 20 μm, have been reported here. The measurements on SiO2/Si have been performed for oxide thickness ranging from 60 to 500 nm. These results coupled with calculations of emissivity from first principles lead us to model the wavelength dependence of emissivity. Emissivity estimates have been obtained for HgCdTe using its fundamental optical constants.

UR - https://www.scopus.com/pages/publications/0027961751

UR - https://www.scopus.com/inward/citedby.url?scp=0027961751&partnerID=8YFLogxK

U2 - 10.1557/proc-342-431

DO - 10.1557/proc-342-431

M3 - Conference article

AN - SCOPUS:0027961751

SN - 0272-9172

VL - 342

SP - 431

EP - 436

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 Spring Meeting of the Materials Research Society

Y2 - 4 April 1994 through 7 April 1994

ER -

Temperature dependent emissivity measurements of Si, SiO₂/Si, and HgCdTe

Abstract

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