Temperature-dependent emissivity of silicon-related materials and structures

Nuggehalli M. Ravindra, Sufian Abedrabbo, Wei Chen, Feiming M. Tong, Arun K. Nanda, Anthony C. Speranza

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study.

Original languageEnglish (US)
Pages (from-to)30-39
Number of pages10
JournalIEEE Transactions on Semiconductor Manufacturing
Volume11
Issue number1
DOIs
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Keywords

  • Emissivity
  • Optical properties
  • Rapid thermal processing
  • Silicon
  • Silicon dioxide
  • Silicon nitride
  • Temperature measurement

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