Temperature-dependent emissivity of silicon-related materials and structures

Nuggehalli M. Ravindra; Sufian Abedrabbo; Wei Chen; Feiming M. Tong; Arun K. Nanda; Anthony C. Speranza

doi:10.1109/66.661282

Temperature-dependent emissivity of silicon-related materials and structures

Nuggehalli M. Ravindra, Sufian Abedrabbo, Wei Chen, Feiming M. Tong, Arun K. Nanda, Anthony C. Speranza

Physics

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study.

Original language	English (US)
Pages (from-to)	30-39
Number of pages	10
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/66.661282
State	Published - 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Keywords

Emissivity
Optical properties
Rapid thermal processing
Silicon
Silicon dioxide
Silicon nitride
Temperature measurement

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10.1109/66.661282

Cite this

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title = "Temperature-dependent emissivity of silicon-related materials and structures",

abstract = "The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study.",

keywords = "Emissivity, Optical properties, Rapid thermal processing, Silicon, Silicon dioxide, Silicon nitride, Temperature measurement",

author = "Ravindra, \{Nuggehalli M.\} and Sufian Abedrabbo and Wei Chen and Tong, \{Feiming M.\} and Nanda, \{Arun K.\} and Speranza, \{Anthony C.\}",

note = "Funding Information: Further, this on-line computer enables the user to flip the mirrors to acquire transmission/reflection spectra via software configurations such as Spectra Calc and GRAMS. The system, acquired by NJIT from On-Line Technologies through a research grant from DARPA, is the third of its kind in the United States. Funding Information: Manuscript received January 9, 1997; revised July 24, 1997. This work was supported in part by grants from New Jersey Commission on Science and Technology, SEMATECH Contract 360220900, the U.S. Air Force Wright Laboratory, and the DARPA Microelectronics Technology Office under Contract F33615-92-C-5817, DARPA (TRP) Contract DAAH04-94-C-0041, and DARPA Contract DAAH04-95-1-0056 awarded through the U.S. Army Research Office, Research Triangle Park, NC.",

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doi = "10.1109/66.661282",

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AU - Ravindra, Nuggehalli M.

AU - Abedrabbo, Sufian

AU - Chen, Wei

AU - Tong, Feiming M.

AU - Nanda, Arun K.

AU - Speranza, Anthony C.

N1 - Funding Information: Further, this on-line computer enables the user to flip the mirrors to acquire transmission/reflection spectra via software configurations such as Spectra Calc and GRAMS. The system, acquired by NJIT from On-Line Technologies through a research grant from DARPA, is the third of its kind in the United States. Funding Information: Manuscript received January 9, 1997; revised July 24, 1997. This work was supported in part by grants from New Jersey Commission on Science and Technology, SEMATECH Contract 360220900, the U.S. Air Force Wright Laboratory, and the DARPA Microelectronics Technology Office under Contract F33615-92-C-5817, DARPA (TRP) Contract DAAH04-94-C-0041, and DARPA Contract DAAH04-95-1-0056 awarded through the U.S. Army Research Office, Research Triangle Park, NC.

PY - 1998

Y1 - 1998

N2 - The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study.

AB - The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study.

KW - Emissivity

KW - Optical properties

KW - Rapid thermal processing

KW - Silicon

KW - Silicon dioxide

KW - Silicon nitride

KW - Temperature measurement

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JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

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Temperature-dependent emissivity of silicon-related materials and structures

Abstract

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