Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon

Hieu Pham Trung Nguyen, Mehrdad Djavid, Kai Cui, Zetian Mi

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

In this paper, we have performed a detailed investigation of the temperature- and current-dependent emission characteristics of nanowire light-emitting diodes, wherein InGaN/GaN dot-in-a-wire nanoscale heterostructures and a p-doped AlGaN electron blocking layer are incorporated in the devices active region to achieve white-light emission and to prevent electron overflow, respectively. Through these studies, the Auger coefficient is estimated to be in the range of ∼10 34 cm 6 s 1 or less, which is nearly four orders of magnitude smaller than the commonly reported values of planar InGaN/GaN heterostructures, suggesting Auger recombination plays an essentially negligible role in the performance of GaN-based nanowire light-emitting diodes. It is observed, however, that the performance of such nanowire LEDs suffers severely from Shockley-Read-Hall recombination, which can account for nearly 40% of the total carrier recombination under moderate injection conditions (100Acm 2) at room temperature. The Shockley-Read-Hall nonradiative lifetime is estimated to be in the range of a few nanoseconds at room temperature, which correlates well with the surface recombination velocity of GaN and the wire diameters used in this experiment.

Original languageEnglish (US)
Article number194012
JournalNanotechnology
Volume23
Issue number19
DOIs
StatePublished - May 17 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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