Temperature-dependent pinning at the Al/n-GaAs(110) interface

T. Kendelewicz, M. D. Williams, K. K. Chin, C. E. McCants, R. S. List, I. Lindau, W. E. Spicer

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


It is shown that at the Al/n-GaAs(110) interface grown in ultrahigh vacuum at -80°C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low-temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.

Original languageEnglish (US)
Pages (from-to)919-921
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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