Temperature-dependent pinning at the Al/n-GaAs(110) interface

T. Kendelewicz; M. D. Williams; K. K. Chin; C. E. McCants; R. S. List; I. Lindau; W. E. Spicer

doi:10.1063/1.96658

Temperature-dependent pinning at the Al/n-GaAs(110) interface

T. Kendelewicz, M. D. Williams, K. K. Chin, C. E. McCants, R. S. List, I. Lindau, W. E. Spicer

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

It is shown that at the Al/n-GaAs(110) interface grown in ultrahigh vacuum at -80°C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low-temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.

Original language	English (US)
Pages (from-to)	919-921
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	14
DOIs	https://doi.org/10.1063/1.96658
State	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.96658

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title = "Temperature-dependent pinning at the Al/n-GaAs(110) interface",

abstract = "It is shown that at the Al/n-GaAs(110) interface grown in ultrahigh vacuum at -80°C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low-temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.",

author = "T. Kendelewicz and Williams, {M. D.} and Chin, {K. K.} and McCants, {C. E.} and List, {R. S.} and I. Lindau and Spicer, {W. E.}",

year = "1986",

doi = "10.1063/1.96658",

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TY - JOUR

T1 - Temperature-dependent pinning at the Al/n-GaAs(110) interface

AU - Kendelewicz, T.

AU - Williams, M. D.

AU - Chin, K. K.

AU - McCants, C. E.

AU - List, R. S.

AU - Lindau, I.

AU - Spicer, W. E.

PY - 1986

Y1 - 1986

N2 - It is shown that at the Al/n-GaAs(110) interface grown in ultrahigh vacuum at -80°C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low-temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.

AB - It is shown that at the Al/n-GaAs(110) interface grown in ultrahigh vacuum at -80°C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low-temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.

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U2 - 10.1063/1.96658

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Temperature-dependent pinning at the Al/n-GaAs(110) interface

Abstract

All Science Journal Classification (ASJC) codes

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