Effect of temperature on time-to-breakdown (TBD) of n+-ringed n-channel MOS capacitors with atomic layer deposited TiN/HfO2 based gate stacks is studied. While interfacial layer (IL) growth condition and thickness varied the high-κ layer thickness and processing was unchanged. These devices were investigated by applying a constant voltage stress (CVS) in inversion (substrate injection) at room and elevated temperatures. For high electric fields (10-15 MV/cm) across IL, it is observed that TBD is thermally activated irrespective of IL condition. Activation energies (2-3 eV after correction), found from Arrhenius plots of TBD for different IL conditions, show good matches with those associated with field-driven thermochemical model of breakdown developed for SiO2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering