Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

N. A. Chowdhury, X. Wang, G. Bersuker, C. Young, N. Rahim, D. Misra

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Effect of temperature on time-to-breakdown (TBD) of n+-ringed n-channel MOS capacitors with atomic layer deposited TiN/HfO2 based gate stacks is studied. While interfacial layer (IL) growth condition and thickness varied the high-κ layer thickness and processing was unchanged. These devices were investigated by applying a constant voltage stress (CVS) in inversion (substrate injection) at room and elevated temperatures. For high electric fields (10-15 MV/cm) across IL, it is observed that TBD is thermally activated irrespective of IL condition. Activation energies (2-3 eV after correction), found from Arrhenius plots of TBD for different IL conditions, show good matches with those associated with field-driven thermochemical model of breakdown developed for SiO2.

Original languageEnglish (US)
Pages (from-to)495-498
Number of pages4
JournalMicroelectronics Reliability
Volume49
Issue number5
DOIs
StatePublished - May 1 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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