Abstract
Effect of temperature on time-to-breakdown (TBD) of n+-ringed n-channel MOS capacitors with atomic layer deposited TiN/HfO2 based gate stacks is studied. While interfacial layer (IL) growth condition and thickness varied the high-κ layer thickness and processing was unchanged. These devices were investigated by applying a constant voltage stress (CVS) in inversion (substrate injection) at room and elevated temperatures. For high electric fields (10-15 MV/cm) across IL, it is observed that TBD is thermally activated irrespective of IL condition. Activation energies (2-3 eV after correction), found from Arrhenius plots of TBD for different IL conditions, show good matches with those associated with field-driven thermochemical model of breakdown developed for SiO2.
Original language | English (US) |
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Pages (from-to) | 495-498 |
Number of pages | 4 |
Journal | Microelectronics Reliability |
Volume | 49 |
Issue number | 5 |
DOIs | |
State | Published - May 2009 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering