Keyphrases
Temperature Effect
100%
HfO2
100%
N-channel
100%
Interfacial Layer
100%
Time to Breakdown
100%
MOS Devices
100%
Layer Condition
50%
Field-assisted
25%
Room Temperature
25%
Growth Conditions
25%
Silica
25%
Gate Stack
25%
Elevated Temperature
25%
Layer Growth
25%
Activation Energy
25%
Constant Voltage Stress
25%
Thermochemical Model
25%
Atomic Layer Deposited
25%
Thermally Activated Processes
25%
High Layer Thickness
25%
High Electric Field
25%
MOS Capacitor
25%
Arrhenius Plot
25%
Engineering
Interfacial Layer
100%
Room Temperature
25%
Atomic Layer
25%
Layer Thickness
25%
Good Match
25%
Activation Energy
25%
Gate Stack
25%
Elevated Temperature
25%
Growth Condition
25%
Constant Voltage
25%
High Electric Field
25%
Arrhenius Plot
25%
Layer Processing
25%