Temperature dependent time-to-breakdown (T_BD) of TiN/HfO₂ n-channel MOS devices in inversion

Keyphrases

• Temperature Effect 100%
• HfO2 100%
• N-channel 100%
• Interfacial Layer 100%
• Time to Breakdown 100%
• MOS Devices 100%
• Layer Condition 50%
• Field-assisted 25%
• Room Temperature 25%
• Growth Conditions 25%
• Silica 25%
• Gate Stack 25%
• Elevated Temperature 25%
• Layer Growth 25%
• Activation Energy 25%
• Constant Voltage Stress 25%
• Thermochemical Model 25%
• Atomic Layer Deposited 25%
• Thermally Activated Processes 25%
• High Layer Thickness 25%
• High Electric Field 25%
• MOS Capacitor 25%
• Arrhenius Plot 25%

Engineering

• Interfacial Layer 100%
• Room Temperature 25%
• Atomic Layer 25%
• Layer Thickness 25%
• Good Match 25%
• Activation Energy 25%
• Gate Stack 25%
• Elevated Temperature 25%
• Growth Condition 25%
• Constant Voltage 25%
• High Electric Field 25%
• Arrhenius Plot 25%
• Layer Processing 25%