Temperature Effects on Characteristics of High-k Gate Dielectrics With Metal Gates

Nilufa Rahim, Durgamadhab Misra

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

In this paper, the temperature dependence of time-dependent dielectric breakdown (BD) and stress-induced leakage current (SILC) of high-k and interfacial layers (ILs) are studied separately and in a gate stack with metal gates as the BD mechanisms of these layers are different at higher temperatures than at room temperature. As observed from the low voltage SILC, the IL initiates the gate stack BD process at elevated temperature, which is followed by the high-k layer. Activation energy extracted from Weibulll distribution of time-to-BD (tbd) data from high-k layer further suggests that the gate stack BD occurs when high-k layer ultimately breaks down.

Original languageEnglish (US)
Pages (from-to)689-693
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume8
Issue number4
DOIs
StatePublished - Jan 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Keywords

  • High-k dielectric
  • Weibull distribution
  • stress-induced leakage current (SILC)
  • time-dependent dielectric breakdown (TDDB)

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