Testing for coupled cells in random-access memories

J. Savir, W. H. McAnney, S. R. Vecchio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations


Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.

Original languageEnglish (US)
Title of host publication20 Int Test Conf 1989 ITC
Editors Anon
PublisherPubl by IEEE
Number of pages13
ISBN (Print)0818689625
StatePublished - 1989
Externally publishedYes
Event20th International Test Conference 1989 (ITC) - Washington, DC, USA
Duration: Aug 29 1989Aug 31 1989

Publication series

Name20 Int Test Conf 1989 ITC


Other20th International Test Conference 1989 (ITC)
CityWashington, DC, USA

All Science Journal Classification (ASJC) codes

  • General Engineering


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