Testing for coupled cells in random-access memories

Jacob Savir; W. H. McAnney; S. R. Vecchio

Testing for coupled cells in random-access memories

Jacob Savir, W. H. McAnney, S. R. Vecchio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.

Original language	English (US)
Title of host publication	20 Int Test Conf 1989 ITC
Editors	Anon
Publisher	Publ by IEEE
Pages	439-451
Number of pages	13
ISBN (Print)	0818689625
State	Published - Dec 1 1989
Externally published	Yes
Event	20th International Test Conference 1989 (ITC) - Washington, DC, USA Duration: Aug 29 1989 → Aug 31 1989

Other

Other	20th International Test Conference 1989 (ITC)
City	Washington, DC, USA
Period	8/29/89 → 8/31/89

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Testing for coupled cells in random-access memories",

abstract = "Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.",

author = "Jacob Savir and McAnney, {W. H.} and Vecchio, {S. R.}",

year = "1989",

month = dec,

day = "1",

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pages = "439--451",

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note = "20th International Test Conference 1989 (ITC) ; Conference date: 29-08-1989 Through 31-08-1989",

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T1 - Testing for coupled cells in random-access memories

AU - Savir, Jacob

AU - McAnney, W. H.

AU - Vecchio, S. R.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.

AB - Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.

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M3 - Conference contribution

AN - SCOPUS:0024915815

SN - 0818689625

SP - 439

EP - 451

BT - 20 Int Test Conf 1989 ITC

A2 - Anon, null

PB - Publ by IEEE

T2 - 20th International Test Conference 1989 (ITC)

Y2 - 29 August 1989 through 31 August 1989

ER -

Testing for coupled cells in random-access memories

Abstract

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All Science Journal Classification (ASJC) codes

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