Testing for Coupled Cells in Random-Access Memories

J. Savir; W. H. McAnney; S. R. Vecchio

doi:10.1109/12.93752

Testing for Coupled Cells in Random-Access Memories

J. Savir
, W. H. McAnney
, S. R. Vecchio

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n word by 1 bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level.

Original language	English (US)
Pages (from-to)	1177-1180
Number of pages	4
Journal	IEEE Transactions on Computers
Volume	40
Issue number	10
DOIs	https://doi.org/10.1109/12.93752
State	Published - Oct 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Software
Theoretical Computer Science
Hardware and Architecture
Computational Theory and Mathematics

Keywords

Escape probability
memory testing
pattern-sensitive fault
random testing
signal probability

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10.1109/12.93752

Cite this

@article{ca7f9b253702425389dff3e2967eaf06,

title = "Testing for Coupled Cells in Random-Access Memories",

abstract = "Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n word by 1 bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level.",

keywords = "Escape probability, memory testing, pattern-sensitive fault, random testing, signal probability",

author = "J. Savir and McAnney, \{W. H.\} and Vecchio, \{S. R.\}",

year = "1991",

month = oct,

doi = "10.1109/12.93752",

language = "English (US)",

volume = "40",

pages = "1177--1180",

journal = "IEEE Transactions on Computers",

issn = "0018-9340",

publisher = "IEEE Computer Society",

number = "10",

}

TY - JOUR

T1 - Testing for Coupled Cells in Random-Access Memories

AU - Savir, J.

AU - McAnney, W. H.

AU - Vecchio, S. R.

PY - 1991/10

Y1 - 1991/10

N2 - Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n word by 1 bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level.

AB - Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n word by 1 bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level.

KW - Escape probability

KW - memory testing

KW - pattern-sensitive fault

KW - random testing

KW - signal probability

UR - https://www.scopus.com/pages/publications/0026242250

UR - https://www.scopus.com/pages/publications/0026242250#tab=citedBy

U2 - 10.1109/12.93752

DO - 10.1109/12.93752

M3 - Article

AN - SCOPUS:0026242250

SN - 0018-9340

VL - 40

SP - 1177

EP - 1180

JO - IEEE Transactions on Computers

JF - IEEE Transactions on Computers

IS - 10

ER -

Testing for Coupled Cells in Random-Access Memories

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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