The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface

K. K. Chin

doi:10.1016/0038-1098(90)90207-R

The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface

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Abstract

The phenomenon of metal/semiconductor interface Fermi level "de-pinning" is observed at the interface of In on n-GaAs(1 1 0). The temperature dependence of Schottky barrier formation at the nonreactive In/n-GaAs(1 1 0) interface has been studied by photoemission spectroscopy. For the n-GaAs(1 1 0) surface, which is kept at liquid nitrogen temperature during cleave and indium deposition, the surface Fermi level pinning at midgap does not occur until a complete In overlayer is formed. When the In/n-GaAs(1 1 0) interface formed at low temperature is warmed up to room temperature, part of the GaAs surface band bending disappears, while the In overlayers froms clusters and the GaAs substrate is partly re-exposed. The phenomenon of "de-pinning" may shine new light on the Schottky barrier formation mechanism for nonreactive interface systems. Its implication is discussed in terms of various plausible Schottky barrier theories and models.

Original language	English (US)
Pages (from-to)	45-48
Number of pages	4
Journal	Solid State Communications
Volume	74
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(90)90207-R
State	Published - Apr 1990

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(90)90207-R

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@article{adaa262bf90046018cabdbd9999db8e2,

title = "The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface",

abstract = "The phenomenon of metal/semiconductor interface Fermi level {"}de-pinning{"} is observed at the interface of In on n-GaAs(1 1 0). The temperature dependence of Schottky barrier formation at the nonreactive In/n-GaAs(1 1 0) interface has been studied by photoemission spectroscopy. For the n-GaAs(1 1 0) surface, which is kept at liquid nitrogen temperature during cleave and indium deposition, the surface Fermi level pinning at midgap does not occur until a complete In overlayer is formed. When the In/n-GaAs(1 1 0) interface formed at low temperature is warmed up to room temperature, part of the GaAs surface band bending disappears, while the In overlayers froms clusters and the GaAs substrate is partly re-exposed. The phenomenon of {"}de-pinning{"} may shine new light on the Schottky barrier formation mechanism for nonreactive interface systems. Its implication is discussed in terms of various plausible Schottky barrier theories and models.",

author = "Chin, {K. K.}",

note = "Funding Information: Acknowledgement -After this paper was finished, the author obtained Chiang et ul.{\textquoteleft}s preprint [30] on the similar de-pinning phenomenon of Ag/n-GaAs(1 1 0) interface. The confirmation of Chiang et a/.{\textquoteleft}~ result in a different interface system and at a lower temperature regime implies that the phenomenon of depinning may occur in all non-reactive interfaces. Around the same time the author also had accesst o Miyano e1a{\textquoteright} l.{\textquoteleft}s comment [31] about the uncertainties of the de-pinning of In/n-GaAs( 1 10 ). The author believes that the interest, controversy, and confusion on de-pinning will lead to the understanding of the phenomenon. The author is grateful to Professors W. E. Spicer and I. Lindau for their support in this work. He also acknowledges the support from NJIT{\textquoteright}s SBR 4-2-1420 and 4-2-1520. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1990",

month = apr,

doi = "10.1016/0038-1098(90)90207-R",

language = "English (US)",

volume = "74",

pages = "45--48",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "1",

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T1 - The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface

AU - Chin, K. K.

N1 - Funding Information: Acknowledgement -After this paper was finished, the author obtained Chiang et ul.‘s preprint [30] on the similar de-pinning phenomenon of Ag/n-GaAs(1 1 0) interface. The confirmation of Chiang et a/.‘~ result in a different interface system and at a lower temperature regime implies that the phenomenon of depinning may occur in all non-reactive interfaces. Around the same time the author also had accesst o Miyano e1a’ l.‘s comment [31] about the uncertainties of the de-pinning of In/n-GaAs( 1 10 ). The author believes that the interest, controversy, and confusion on de-pinning will lead to the understanding of the phenomenon. The author is grateful to Professors W. E. Spicer and I. Lindau for their support in this work. He also acknowledges the support from NJIT’s SBR 4-2-1420 and 4-2-1520. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1990/4

Y1 - 1990/4

N2 - The phenomenon of metal/semiconductor interface Fermi level "de-pinning" is observed at the interface of In on n-GaAs(1 1 0). The temperature dependence of Schottky barrier formation at the nonreactive In/n-GaAs(1 1 0) interface has been studied by photoemission spectroscopy. For the n-GaAs(1 1 0) surface, which is kept at liquid nitrogen temperature during cleave and indium deposition, the surface Fermi level pinning at midgap does not occur until a complete In overlayer is formed. When the In/n-GaAs(1 1 0) interface formed at low temperature is warmed up to room temperature, part of the GaAs surface band bending disappears, while the In overlayers froms clusters and the GaAs substrate is partly re-exposed. The phenomenon of "de-pinning" may shine new light on the Schottky barrier formation mechanism for nonreactive interface systems. Its implication is discussed in terms of various plausible Schottky barrier theories and models.

AB - The phenomenon of metal/semiconductor interface Fermi level "de-pinning" is observed at the interface of In on n-GaAs(1 1 0). The temperature dependence of Schottky barrier formation at the nonreactive In/n-GaAs(1 1 0) interface has been studied by photoemission spectroscopy. For the n-GaAs(1 1 0) surface, which is kept at liquid nitrogen temperature during cleave and indium deposition, the surface Fermi level pinning at midgap does not occur until a complete In overlayer is formed. When the In/n-GaAs(1 1 0) interface formed at low temperature is warmed up to room temperature, part of the GaAs surface band bending disappears, while the In overlayers froms clusters and the GaAs substrate is partly re-exposed. The phenomenon of "de-pinning" may shine new light on the Schottky barrier formation mechanism for nonreactive interface systems. Its implication is discussed in terms of various plausible Schottky barrier theories and models.

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The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface

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