The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface

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Abstract

The phenomenon of metal/semiconductor interface Fermi level "de-pinning" is observed at the interface of In on n-GaAs(1 1 0). The temperature dependence of Schottky barrier formation at the nonreactive In/n-GaAs(1 1 0) interface has been studied by photoemission spectroscopy. For the n-GaAs(1 1 0) surface, which is kept at liquid nitrogen temperature during cleave and indium deposition, the surface Fermi level pinning at midgap does not occur until a complete In overlayer is formed. When the In/n-GaAs(1 1 0) interface formed at low temperature is warmed up to room temperature, part of the GaAs surface band bending disappears, while the In overlayers froms clusters and the GaAs substrate is partly re-exposed. The phenomenon of "de-pinning" may shine new light on the Schottky barrier formation mechanism for nonreactive interface systems. Its implication is discussed in terms of various plausible Schottky barrier theories and models.

Original languageEnglish (US)
Pages (from-to)45-48
Number of pages4
JournalSolid State Communications
Volume74
Issue number1
DOIs
StatePublished - Apr 1990

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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