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The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface
K. K. Chin
CNBM New Energy Materials Research Center
Physics
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Dive into the research topics of 'The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface'. Together they form a unique fingerprint.
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Chemical Compounds
Schottky Barrier
100%
Fermi Level
56%
Band Bending
34%
Photoelectron Spectroscopy
24%
Surface
23%
Semiconductor
18%
Molecular Cluster
15%
Nitrogen
14%
Ambient Reaction Temperature
13%
Liquid
13%
Metal
10%
Engineering & Materials Science
Fermi level
63%
Photoelectron spectroscopy
31%
Temperature
29%
Indium
23%
Liquid nitrogen
23%
Semiconductor materials
16%
Substrates
12%
Metals
11%
Physics & Astronomy
liquid nitrogen
14%
Fermi surfaces
14%
indium
13%
photoelectric emission
12%
temperature dependence
9%
room temperature
8%
spectroscopy
7%
metals
7%
temperature
4%