The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3Nano-HEMT

G. Purnachandra Rao, Nistha Baruah, Trupti Ranjan Lenka, Rajan Singh, Nour El I. Boukortt, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this research article, the influence of AlGaN back-barrier on the device performance has been analyzed. The study has been conducted based on the effect on the breakdown characteristics and RF performance. The inclusion of back barrier helps to raise conduction band, which diminishes the leakage path below the buffer layer and also helps to contain the 2DEG in the narrow channel. Furthermore, the RF performance is improved by mitigating the conduction losses and short channel effects. The device having the features of Si3N4 passivation, recessed gate structure and the substrate used is β-Ga2O3. The enhancement in breakdown voltage, RF performance (fT & fmax) with the presence of AlGaN back barrier in proposed III-Nitride Nano-HEMT on the preferred β-Ga2O3 is observed in both the cases of with & without field-plate. So, the future of HEMT technology is promising with the ongoing improvements to fulfil operational needs.

Original languageEnglish (US)
Title of host publicationProceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages434-439
Number of pages6
ISBN (Electronic)9781665472050
DOIs
StatePublished - 2022
Event2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022 - Kolkata, India
Duration: Nov 26 2022Nov 27 2022

Publication series

NameProceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022

Conference

Conference2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022
Country/TerritoryIndia
CityKolkata
Period11/26/2211/27/22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Keywords

  • BV
  • Back-Barrier
  • III-Nitride
  • f
  • f
  • β-GaO

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