TY - GEN
T1 - The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3Nano-HEMT
AU - Rao, G. Purnachandra
AU - Baruah, Nistha
AU - Lenka, Trupti Ranjan
AU - Singh, Rajan
AU - Boukortt, Nour El I.
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this research article, the influence of AlGaN back-barrier on the device performance has been analyzed. The study has been conducted based on the effect on the breakdown characteristics and RF performance. The inclusion of back barrier helps to raise conduction band, which diminishes the leakage path below the buffer layer and also helps to contain the 2DEG in the narrow channel. Furthermore, the RF performance is improved by mitigating the conduction losses and short channel effects. The device having the features of Si3N4 passivation, recessed gate structure and the substrate used is β-Ga2O3. The enhancement in breakdown voltage, RF performance (fT & fmax) with the presence of AlGaN back barrier in proposed III-Nitride Nano-HEMT on the preferred β-Ga2O3 is observed in both the cases of with & without field-plate. So, the future of HEMT technology is promising with the ongoing improvements to fulfil operational needs.
AB - In this research article, the influence of AlGaN back-barrier on the device performance has been analyzed. The study has been conducted based on the effect on the breakdown characteristics and RF performance. The inclusion of back barrier helps to raise conduction band, which diminishes the leakage path below the buffer layer and also helps to contain the 2DEG in the narrow channel. Furthermore, the RF performance is improved by mitigating the conduction losses and short channel effects. The device having the features of Si3N4 passivation, recessed gate structure and the substrate used is β-Ga2O3. The enhancement in breakdown voltage, RF performance (fT & fmax) with the presence of AlGaN back barrier in proposed III-Nitride Nano-HEMT on the preferred β-Ga2O3 is observed in both the cases of with & without field-plate. So, the future of HEMT technology is promising with the ongoing improvements to fulfil operational needs.
KW - BV
KW - Back-Barrier
KW - III-Nitride
KW - f
KW - f
KW - β-GaO
UR - http://www.scopus.com/inward/record.url?scp=85148689987&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85148689987&partnerID=8YFLogxK
U2 - 10.1109/EDKCON56221.2022.10032868
DO - 10.1109/EDKCON56221.2022.10032868
M3 - Conference contribution
AN - SCOPUS:85148689987
T3 - Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022
SP - 434
EP - 439
BT - Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022
Y2 - 26 November 2022 through 27 November 2022
ER -