The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga₂O₃Nano-HEMT

Keyphrases

• Performance Enhancement 100%
• III-nitrides 100%
• Back Barrier 100%
• RF Performance 100%
• Ga2O3 66%
• AlGaN Back Barrier 66%
• Device Performance 33%
• Conduction Band 33%
• Operational Need 33%
• Breakdown Characteristics 33%
• Short Channel Effects 33%
• Fmax 33%
• Breakdown Voltage 33%
• Characteristic Performance 33%
• Buffer Layer 33%
• Field Plate 33%
• Recessed Gate Structure 33%
• Ongoing Improvement 33%
• Narrow Channel 33%
• Loss Channel 33%
• Conduction Losses 33%
• Leakage Path 33%
• HEMT Technology 33%
• Si3N4 Passivation 33%

Engineering

• Nitride 100%
• Device Performance 50%
• Passivation 50%
• Conduction Band 50%
• Buffer Layer 50%
• Breakdown Voltage 50%
• Narrow Channel 50%
• Conduction Loss 50%

Material Science

• Nitride Compound 100%
• Silicon Nitride 50%
• Buffer Layer 50%