The effect of CVD W/TiW metallization on very shallow CoSi2 junctions

S. A. Eshraghi, George Georgiou, R. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of Al/CVD W deposition on shallow junctions below CoSi2 using 450-1800-angstrom sputtered TiW as a barrier/glue layer is investigated. The thermal stability of the Al/CVD W/TiW/CoSi2 structure is studied by comparing the reverse bias current of the initial diodes with that after annealing the structure. The results for the deeper n+(P)/p diodes approximately 1000 angstrom below approximately 700-angstrom CoSi2 are different from those for the p+(BF2)/n diodes approximately 500 angstrom below CoSi2. When the TiW is >450 angstrom thick, Al/CVD W does not degrade the n+/p diodes. The reverse bias current is <10 nA/cm2 when the Al/CVD W/900-angstrom TiW is annealed at up to 450°C for 60 min. The n+/p diode sport population increases when CVD W is deposited on 450-angstrom TiW. The diodes are severely degraded after 3000-angstrom Al is sputtered at 300°C. The temperature of CVD W deposition affected the degradation of the p+/n diodes. Higher-temperature depositions at approximately 500°C degraded these diodes less than depositions at approximately 300°C. However, annealing the Al/CVD W/900-angstrom TiW/CoSi2 p+/n structures at 400°C for 30 min degrades the diodes independently of the CVD W temperature where 300 < T < 500°C.

Original languageEnglish (US)
Title of host publicationProceedings - International IEEE VLSI Multilevel Interconnection Conference
PublisherPubl by IEEE
Pages319-321
Number of pages3
StatePublished - Dec 1 1990
Externally publishedYes
Event1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: Jun 12 1990Jun 13 1990

Other

Other1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period6/12/906/13/90

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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