The effect of defects on time dependent dielectric breakdown acceleration in TiN/ZrO2/Al2O3/p-Ge gate stacks

Y. M. Ding, D. Misra, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates the p-Ge/Al2O3/ZrO2/TiN gate stacks with thin GeO2 or GeOx layer, formed when the gate stack was exposed to pre- or post-deposition slot plane antenna plasma oxidation (SPAO). The post Al2O3/ZrO2 deposition SPAO forms relatively thicker GeO2 and post Al2O3 deposition SPAO forms thinner GeO2 whereas pre-deposition SPAO forms thin fragmented GeOx layer at the interface. By employing carrier transport mechanisms as a function of temperature in both gate and substrate injection mode we were able to identify the traps that contributes to the TDDB degradation. The SPAO treatment effectively removes the trap centers in ZrO2 and Al2O3 layers when SPAO was performed after the gate stack deposition. The trap center (φt1 = 0.13 eV) observed in the ZrO2 when ZrO2 is not subjected to the SPAO, i.e. pre-deposition SPAO. This trap φt1 (0.13 eV) was eliminated for post Al2O3/ZrO2 deposition SPAO. While defects in the ZrO2 layer determines the TDDB characteristics in gate injection mode the GeO2 or GeOx interfacial layer thickness determines the TDDB degradation in substrate injection mode. The TDDB characteristics in gate injection mode suggests that the SPAO can significantly affect the TDDB characteristics.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7
EditorsF. Roozeboom, H. Jagannathan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. De Gendt
PublisherElectrochemical Society Inc.
Pages43-50
Number of pages8
Edition5
ISBN (Electronic)9781607688082
DOIs
StatePublished - 2017
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: May 28 2017Jun 1 2017

Publication series

NameECS Transactions
Number5
Volume77
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 - 231st ECS Meeting 2017
CountryUnited States
CityNew Orleans
Period5/28/176/1/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'The effect of defects on time dependent dielectric breakdown acceleration in TiN/ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/p-Ge gate stacks'. Together they form a unique fingerprint.

Cite this